비의류제품

the role of atmospheric oxygen and water in the generation of water marks on the silicon surface in cleaning processes

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 449
water marks are one of the most common contamination problems, which induce various kinds of device defects in (lsi) technology water marks have been attributed to residues of water used in the cleaning process. however, the purity of deionized water used in lsi fabrication today is extremely high. nevertheless, the authors recently found that water marks were induced even with such pure water. water marks are induced on the silicon and poly-silicon surface during the drying process after hf etching. the mechanism that induces water marks is as follows' (1) dissolution of o/sub 2/ gas into a water drop on the silicon surface: (2) oxidation of the silicon surface and the dissolution of oxidized silicon (probably h/sub 2/sio/sub 3/) into the water: (3) drying of the water drops and deposition of residual h/sub 2/sio/sub 3/ on the silicon
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