비의류제품

marked reduction of the surface/interface states of gaas by (nh/sub 4/)/sub 2/s/sub x/ treatment

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 447
mis capacitors have been fabricated on (nh/sub 4/)/sub 2/s/sub x/-treated gaas using a sio/sub x/ insulator prepared by conventional resistive-heating evaporation. the mis interface state density was found to be about 1.2*10/sup 11/ cm/sup -2/.ev/sup -1/ in a wide range of the band gap, which is two orders of magnitude less than that on the as-etched gaas
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