비의류제품

control of the electrical properties of aln/thin-a-si/gaas mis diodes by gaas surface pretreatments

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 440
the influence of gaas surface stoichiometry was investigated on the electrical properties of aln/thin-a-si/gaas mis diodes which have an amorphous si interlayer. the structures were fabricated by an mocvd method with surface stoichiometry control by ash/sub 3/, h/sub 2/ and tmg (trimethylgallium) pretreatments. these procedures are expected to result in as-rich, as-dimer-stabilized and ga-stabilized gaas surfaces, respectively. for n-gaas, the ash/sub 3/ and h/sub 2/ pretreatments suppressed the frequency dispersion of the accumulation-side capacitance, while the tmg pretreatment caused increase of the dispersion. the opposite behavior was observed for p-gaas. these facts indicate that the function of a-si interlayers is influenced by the initial stoichiometry of gaas surfaces
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