비의류제품

in situ removal of native oxide from silicon wafers

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 463
in many integrated circuit fabrication steps, it is important to be able to ensure that there is no native oxide on a silicon surface before the next layer is deposited. for example, when tungsten is deposited by chemical vapor deposition (cvd) by silicon/hydrogen reduction of wf/sub 6/, attack of the silicon surface can be extensive (i.e. wormholes) if there is a native oxide layer. similarly, growing epitaxial silicon on a single-crystal substrate at a low temperature also depends critically on the removal of such a native oxide. the standard procedure for attempting to remove any surface oxide involves various wet etches, generally concluding with a dip in dilute hf. however, exposing a clean wafer to the atmosphere for even a short time allows some oxide to regrow, since silicon is an extremely reactive material accordingly, it would be desirable to develop an in situ procedure for cleaning of native oxide, and that will be the subject of this brief note
이전글 다음글 목록