비의류제품

inversion layer mobility under high normal field in nitrided-oxide mosfets

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 457
a comprehensive study on the inversion layer mobility improvement of n-channel mosfets with nanometer-range ultra-thin (reoxidized) nitrided oxides is presented. the performance improvement is described from both the device physics modeling and device/circuit design points of view by using the various kinds of current drivability and mobility data over wide ranges of gate drive and e/sub eff/. the nitridation- and reoxidation-condition dependencies of the mobility values are extensively reported. a mechanism for improvement is discussed in conjunction with the observed results of auger electron spectroscopy, capacitance-voltage measurements, hole mobility measurements of p-channel mosfets, and transmission electron microscopy. the (reoxidized) nitrided oxides were fabricated fully by rapid thermal processing instead of conventional quartz-tube furnace annealing, whose major drawback is a considerable redistribution of dopant impurities
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