비의류제품

intrinsic gettering treatments in bipolar integrated circuit processing

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 459
controlled precipitation treatments of the interstitial oxygen have been inserted in the technological process. crystallographic failure distribution on the surface and into the bulk of the silicon wafers was related to the transistor breakdown voltages and to the degree of interstitial oxygen precipitation. it has been noted that the epitaxial layer crystallographic failures can be eliminated in practice by the introduction of intrinsic gettering effects into the initial phases of the process. the proposed method can improve the performance and fabrication yield
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