비의류제품

high performance schottky diode and fet on inp

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 461
a high performance schottky diode has been realized on inp by a special surface treatment. the diode reaches a breakdown voltage of 60 v and the reverse current remains at 0.6 mu a for 30 v reverse voltage. the best device shows a reverse current of 0.2 na at 1 v voltage with an ideality factor of 1.54. the schottky diode has been used as a gate in the fabrication of fets on inp by ion implantation and cbe. a transconductance of 140 ms/mn has been obtained on a 3 mu m gate length fet
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