비의류제품

influence of the fabrication conditions on the p/sup +/-tasi/sub 2//poly-si gate quality

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 445
the effect of different polycide fabrication steps on the resulting p/sup +/ gate quality is investigated. in particular the boron diffusion is studied in correlation with the oxygen contamination. the role of the quality of the tasi/sub 2//poly-si interface and of the annealing atmosphere on the boron redistribution are pointed out
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