비의류제품

the fabrication of epitaxial caf/sub 2//gaas(111) structures by molecular beam epitaxy

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 479
the deposition of monolayers of caf/sub 2/ on gaas(111) semiconductor substrates with the aid of molecular beam epitaxy is described, and the unit schematic design is shown. the experiment involved rest gas measurement before and during the deposition period, while the gaas wafer is introduced in the evacuated vessel after chemical cleaning of the surface. the oxide passivation layer on the cleaned surface promotes the bonding of the carbon deposit, and the gaas substrate is attached to the mo heater by indium. the characteristics of the grown layer are obtained by rheed measurements and by rem examination
이전글 다음글 목록