비의류제품

characteristics of schottky diodes on al/sub x/in/sub 1-x/as grown by mocvd

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 461
the effects of surface pretreatment and a variety of metallisation techniques on the characteristics of schottky diodes fabricated on al/sub x/in/sub 1-x/as grown by low-pressure and atmospheric-pressure mocvd have been investigated. barrier heights have been determined from i-v, c-v and i-t measurements and have been found to be in good agreement. barrier heights of about 0.69 ev were measured for al/sub 0.48/in/sub 0.52/as using pt as the schottky barrier contact
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