비의류제품

oxide films formed on dry etched si surfaces

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 446
photo etching using a hg lamp with cl/sub 2/ gas was applied to si surface cleaning after sf/sub 6/ based gas rie. auger analysis showed that the surface layer damaged in sf/sub 6/ based gas rie was removed with this photo etching. mos diodes were fabricated on the rie etched surface and on the photo cleaned surface. mos c-v characteristics were improved by photo cleaning. there was a difference in the dielectric breakdown characteristics between the oxide formed on a p-type substrate and that on an n-type substrate the former benefited by photo cleaning, whereas the latter did not because of fluctuation of the si-sio/sub 2/ interface. the surface morphology after rie and the photo cleaning affected the structure of the si-sio/sub 2/ interface
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