비의류제품

characterization of silicon bipolar devices fabricated using very-low-temperature plasma process

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 444
studies have been carried out on microcrystalline silicon layers deposited on monocrystalline bases and the heterojunction devices fabricated using them. the mu c-si layers varied from a microcrystalline to epitaxial structure, depending on the substrate surface treatment and plasma-cvd conditions. the interface properties were primarily determined by recombination through interface defects. it was found that very thin interfacial oxides are effective in growing homogeneous, reproducible microcrystalline emitters and in fabricating bipolar transistors with a high current gain of 450
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