비의류제품

unpinned gallium oxide/gaas interface by hydrogen and nitrogen surface plasma treatment

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 449
the fermi level at the ga oxide/gaas interface has been unpinned by rf plasma cleaning the gaas surface in h/sub 2/ and n/sub 2/. following plasma cleaning, a ga oxide film is reactively electron beam deposited onto the substrate metal-oxide-semiconductor (mos) capacitors fabricated on these structures show good high-frequency capacitance-voltage characteristics. this indicates that the density of interface states has been reduced to approximately 10/sup 11/ ev/sup -1/ cm/sup -2/ the mos capacitors are found to be stable in air after several months
이전글 다음글 목록