비의류제품

schottky diode and field-effect transistor on inp

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 451
schottky diode has been realized on inp by a special dry surface treatment. the diode reaches a breakdown voltage of 60 v and the reverse current remains at 0.6 mu a under 30 v reserve voltage the best device shows a reserve current of 0.2 na at 1 v voltage with an ideality factor of 1.54. the schottky has been used as a gate in the fabrication of field-effect transistors (fets) on inp by ion implantation and chemical beam epitaxy. the ion-implanted fet with a channel concentration of 2*10/sup 17/ cm/sup -3/ shows a transconductance of 107 ms/mm at room temperature of a 3 mu m gate length
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