비의류제품

schottky diodes on hydrogen plasma treated n-gaas surfaces

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 432
the characteristics of schottky diodes on n-gaas fabricated after an in situ low-pressure rf h/sub 2/ plasma treatment have been investigated as a function of the substrate temperature during the plasma treatment. degraded rectifying characteristics result after room-temperature treatments, while diodes with ideality factor as low as 1.01 were achieved in the temperature range 160-240 degrees c. an increase in barrier height was also observed with increasing substrate temperature during plasma treatment. the contact properties are correlated to h diffusion in a surface layer of gaas, which passivates the dopant atoms and defect sites
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