비의류제품

reduction of gaas metal-semiconductor field effect transistor sidegating by ultraviolet/ozone cleanup prior to molecular-beam epitaxial growth

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 443
this work demonstrates that uv-ozone cleaning of substrates prior to molecular-beam epitaxial growth, which has been shown by other workers to remove carbon contamination, is effective in suppressing sidegating problems otherwise encountered in gaas metal-semiconductor field effect transistors fabricated on the epitaxial layers
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