비의류제품

photochemical cleaning and epitaxy of si

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 462
photochemical effect on silicon surface cleaning and epitaxial film growth was investigated. under ultraviolet light irradiation, the surface native oxide on the silicon substrate was removed at 730 degrees c. an epitaxial film with high crystal quality was grown on the silicon substrate at a temperature as low as 540 degrees c after thermal surface cleaning at 980 degrees c. the ultraviolet light irradiation seemed to be effective for gas-phase dissociation and surface reaction. auto-doping was suppressed by using low temperature epitaxial growth and an almost ideal step junction was fabricated. a bipolar transistor having a 65 nm epitaxially grown base layer was successfully operated
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