quantitative measurements using x-ray photoemission spectroscopy and ultraviolet photoemission spectroscopy have been made of the cd loss and surface fermi-level position (e/sub f,s/) on hg/sub 1-x/cd/sub x/te substrates that have undergone chemical surface preparation. the surface cleaning techniques employed were representative of those used in hg/sub 1-x/cd/sub x/te device fabrication' a bromine in dimethyl formamide polish, a bromine in ethylene glycol spray, and/or an ozone ash etch. for over 20 samples studied of bulk x=0.30, an average 30 percent of the original cd was found to be removed from within the sampling depth of the surface (25 aa). in addition, e/sub f,s/ was found to be located 0.15+or-0.05 ev above the valence-band maximum (vbm) at room temperature for a predominate number of samples, independent of the bulk doping. some of these samples were also studied at approximately 150 k, and e/sub f,s/ was seen to rise an additional approximately 0.05 ev to a location of 0.20+or-0.05 ev above the vbm at the lower temperature, again independent of bulk doping implications of these findings for device modeling are discussed and first-order surface band diagrams introduced