비의류제품

an optimized in situ argon sputter cleaning process for device quality low-temperature (t<or=800 degrees c) epitaxial silicon' bipolar transistor and pn junction characterization

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 461
a novel in situ argon sputter cleaning process has been developed for the deposition of high-quality low-temperature (t/sub dep/10/sup 8/ dislocations/cm/sup 2/. however, a 100-ev ion energy permits the deposition of high-quality epitaxial layers at temp
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