비의류제품

passivation techniques for silicon solar cells

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 457
the use of heteroepitaxial wide bandgap semiconductor films for passivation of silicon surfaces is presented. the particular films discussed here comprise either gap or zns/sub 1-x/se/sub x/, grown by metalorganic chemical vapor deposition. ideally, such films should transmit majority carriers but reflect minority carriers, and should thus be suitable for passivation at surfaces and beneath contacts. fabrication and characterization of films are discussed attainment of a degree of passivation by using gap is reported
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