비의류제품

schottky and field-effect transistor fabrication on inp and gainas

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 456
schottky contacts with barrier heights of 0.76 ev on n-type inp and 0.65 ev on n-type gainas are realized by a new surface treatment. these contacts are used as a gate for the fabrication of field-effect transistors (fets) on these materials. extrinsic transconductances of 100 and 7.5 ms/mm are measured on gainas and inp fets, respectively. these values are obtained without optimization of the ohmic contacts of the devices and without a gate recess
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