비의류제품

chemical vapor deposition of a silicon nitride layer with an excellent interface by nh/sub 3/ plasma treatment

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 450
a new metal-insulator-semiconductor field-effect transistor (misfet) fabrication technology has been developed by using a silicon nitride insulator. misfets with high field-effect mobility were obtained by exposing a silicon surface to a nh/sub 3/ plasma before silicon nitride (sin/sub x/) deposition as a gate insulator in a rf plasma. an auger spectrum showed possible nitridation of silicon by nh/sub 3/ plasma treatment
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