비의류제품

schottky and fet fabrication on inp and gainas

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 496
schottky contact with barrier heights of 0.76 ev on n-type inp and 0.65 ev on n-type gainas are realized by a new surface treatment. these contacts are used as a gate for the fabrication of field effect transistors in these materials. a transconductance of 100 ms/mm has been obtained on a device realized on gainas
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