비의류제품

simultaneous formation of shallow-deep stepped source/drain for sub-micron cmos

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 490
it is shown that shallow/deep source-drain regions can be formed simultaneously through the use of a disposable nitride space to create an implant screen-oxide step. both n-channel and p-channel sub-half-micron mosfets have been fabricated with excellent characteristics. significantly improved silicide contact resistance and source-drain leakage current are obtained. such a stepped-junction device can be easily implemented in a standard (non-ldd) cmos process without additional masks
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