비의류제품

si-mbe soi device and circuits

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 533
a 100 mu m wide silicon-on-insulator (soi) structure has been achieved by utilizing silicon molecular beam epitaxial (si-mbe) growth and porous oxidized silicon. a si beam with flux density of 7.8*10/sup 13/ cm/sup -2/ s/sup -1/ was used to clean the sample surface at 750 degrees c prior to mbe growth. the mbe si film growth on porous si at 750 degrees c by a two-step growth process shows good crystallinity when checked by rutherford backscattering spectroscopy (rbs) and transmission electron microscopy (tem). soi mosfets were successfully fabricated
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