비의류제품

xps characterization of gaas surfaces prepared by chemical etching processes frequently employed in microcircuit fabrication

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 508
the chemical structure of gaas(100) surfaces treated with various etchants has been examined by x-ray photoelectron spectroscopy (xps). measured peak intensities and chemical shifts in the as and ga 2p levels indicate the formation of a thin (10-15 aa) as/sub 2/o/sub 2/-rich surface oxidized phase, for samples processed with br/sub 2//ch/sub 3/oh and h/sub 2/so/sub 4//h/sub 2/o/sub 2//h/sub 2/o etching formulations commonly used for substrate cleaning. contamination by surface carbon was consistently measured at a level of <14 percent of the top monolayer. the reported measurements demonstrate the capability of xps for evaluation of the surface chemical treatment procedures involved in device processing technology
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