비의류제품

physico-chemical and electrical arsenic-stabilization of inp surface for mis device applications

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 479
thermal treatment at temperatures exceeding 500 degrees c under an arsenic (as) atmosphere of inp substrates results in improved electronic and physicochemical properties of the inp surface in that' the surface state density as derived from capacitance/voltage measurements on mis structures fabricated on treated substrates, is significantly reduced throughout the energy gap: the stability of mis structures in greatly enhanced
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