비의류제품

sub-quarter-micrometer n-channel mosfet's fabricated with direct ion-beam nitridation

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 481
n-channel mosfets with physical gate lengths as short as 0.19 mu m were fabricated with direct e-beam writing and high-resolution pattern transfer techniques. the gate oxide thickness was 8.3 nm with a channel doping level of 1*10/sup 8/ cm/sup -3/. an ion beam nitridized film was used as a selective oxidation mask during the growth of the field oxide. the resulting lateral encroachment of the field oxide was 0.25 mu m per device edge which was much less than that of the conventional locos process. the transport mechanism in the 0.19- mu m gate length transistor was limited by the electron-drift velocity saturation. the rough surface created by the ion beam nitridation step limited the value of the saturation velocity. intrinsic transconductance of 140 ms/mm was measured. the oxide field needed to produce 10/sup -6/ a/cm/sup 2/ leakage current through the gate oxide was about 7 mv/cm for the positively biased gate and 8.8 mv/cm for the negatively biased gate
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