비의류제품

growth of gaas on si and its application to fets and leds

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 484
device quality gaas layers were grown on si (100) substrates by the heat treatment of the substrates prior to the mocvd or mbe growth processes. the layers were found to have single domain structure, mirror-like surface, low epd, high electron mobility and fairly high photoluminescence intensity. small mesfets, ring oscillators, power mesfets and visible leds were fabricated on the grown layers. the properties of these devices were found to be not very inferior to those of the same devices on gaas substrates
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