비의류제품

the physics and chemistry of thin 'native' oxide films on silicon

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 470
thin 'native' oxide films on silicon, resulting from various surface treatments or even exposure to room ambient, play a critical role in the fabrication of high performance, reliable vlsi semiconductor devices. the nature of these 0.5 to 2.0 nm films is discussed with respect to chemical, physical, and electrical properties. particular emphasis is placed on the effects of individual chemical species, used in common cleaning processes, along with those of various impurities contained therein. also, effects of these films on the characteristics of specific device structures, such as mos gate dielectrics, metal-semiconductor contacts, and poly-si emitters, are briefly reviewed
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