비의류제품

nitride, nitrided oxide and oxidized nitride for thin dielectrics

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 481
comparisons of material and electrical parameters between gate and interpoly dielectrics consisting of thermal oxides, nitrides, nitrided oxides and oxidized nitrides are reported. a range of dielectrics, 5 nm to 30 nm thick, are thermally grown using a matrix of oxidation cycles, ammonia concentration and nitridation temperatures and pressures. fabrication of polysilicon gate and interpoly capacitors is typical of industry standards. aes, rbs and ellipsometric analysis of dielectric material properties are discussed and electrical characterization results are presented
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