비의류제품

process control for stabilising the gate oxide preparation

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 487
control measurements of mos-type capacitors by three methods are described to differentiate their breakdown voltages and their charge behaviour. the tests are based on current-voltage sensing as well as using hf and quasi-static monitoring of the c/v curves. the problem of chip preparation, including various methods of surface cleaning and prior treatment technique for the evaluation of mobile charge density in the oxide layer, is described. the instability in the mos structure, and the effect of charge rates with rapid availability of results for process control in the fabrication, are also presented
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