비의류제품

electrical and thermal stability of augeni ohmic contacts to gaas fabricated with in situ rf sputter cleaning

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 475
in situ rf sputter cleaning of the gaas surface before the augeni deposition gave low contact resistance r /sub c/=0.1 omega-mm. when the contacts were annealed at 400 degreesc for 57 hours, r/sub c/ 0.6 omega-mm was obtained. this is still an acceptable value or 1 mum gate mesfet process. with low sputtering voltages or short sputtering times, contact resistance was large and non-uniform. normally a short alloying time of 2 min at 440 degreesc is used for ohmic contact formation. for the process described here, alloying times as long as 15 min at 430 degreesc gave low contact resistances r /sub c/=0.2 omega-mm. when the auge films were deposited from two separate sources at au and ge ('layered' process) low contact resistances r =0.2 omega-mm were obtained. however, this 'layered' process did not show the same kind of uniformity and low contact resistance that was obtained when the auge film was deposited from a single 'eutectic' source
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