비의류제품

semiconducting detectors of alpha-particles fabricated by ion implantation

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 485
the low-energy ion implantation method (e=3 to 5 kev) of boron and phosphorus in p- and n-type silicon (rho=1000-2500 omega cm) is used in conjunction with appropriate methods for mechanical and chemical surface treatments of the materials to fabricate semiconducting detectors for alpha-particle spectrometers high-quality p-n junctions with low reverse currents were obtained at 30 mm/sup 2/ sensitive area, the detectors have a resolving power from 17 to 25 kev for alpha-particles of 5.806 mev energy, when the resolving power of the alpha spectrometer electronics is 10.2 kev
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