비의류제품

current-voltage characteristics of metal-titanium dioxide-silicon structures

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 480
metal-titanium dioxide-silicon capacitors are fabricated using electron-beam-evaporated titanium dioxide as the insulating layer the effects of the titanium dioxide deposition conditions and post-deposition oxidation on the current-voltage characteristics are investigated. a time-dependent current is observed and modelled diffusion of the titanium from the titanium dioxide layer into the p-type silicon substrates during oxidation of the titanium dioxide film results in an n-type diffused layer. leakage current densities as low as 10/sup -9/ a in/sup -2/ at 10 v applied bias are obtained for a 1000 aa film of titanium dioxide
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