비의류제품

vapor sensors formed by chemical modification of porous silicon

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 524
we describe the fabrication of moisture sensors based on the use of porous silicon (ps) or oxidized porous silicon (ops) as the sensing element in a capacitance device and discuss their application in evaluation of moisture barrier coatings for integrated circuits (ics) . the capacitance of a typical sensor changes from 4 nf/cm(sup 2) when exposed to a moisture level of 300 ppm by volume (ppm(sub v)) to 36 nf/cm(sup 2) at 10,000 ppm(sub v). in addition, response to step changes in moisture is rapid and reversible. ops sensor operability at high temperature was demonstrated by the stable performance of the sensors during accelerated testing at 85 relative humidity and 140(degrees)c. we discuss fabrication procedures required for incorporation of ps materials on surface acoustic wave sensors and describe methods for modification of ps surfaces that enhance selectivity for chemical vapors other than water, such as low molecular weight alcohols. 17 refs
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