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비의류제품
plastic deformation of highly doped silicon
- 출판일1999.03
- 저자
- 서지사항
- 등록일 2016.11.02
- 조회수 513
heavily boron doped membranes are shown to be under tensile intrinsic stress with a negative intrinsic bending moment. however, the use of an oxide etch mask during membrane fabrication can alter the state of stress to an apparent compressive state with a positive bending moment. we propose that plastic deformation of the p+ silicon beneath the compressively stressed oxide mask can account for this behavior. (jes)
