비의류제품

properties of devices prepared with epitaxial layers on inp. final rept. jul 85-jun 87

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 548
electrical measurements were made on capacitors prepared with rpecvd sio2 films on p-type ga(0.47)in(0.53)as at low substrate temperatures. these measurements demonstrated that the rpecvd dielectric is suitable for use in the fabrication of misfets measurements on rpecvd sio2 layers on si showed that care must be taken in cleaning and processing to prevent na ions from being introduced into the dielectric layers. to provide stable characteristics, surface cleaning before deposition must be investigated and processing techniques must be used to prevent the introduction of mobile ions into the deposited dielectric layers techniques to reduce the temperature sensitivity of the threshold current density of inp-ga(x)in(1-y)dh lasers were investigated. the most promising technique is the use of thin pseudomorphic active layers and wide energy gap cladding layers. (rh)
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