비의류제품

interfacial and breakdown characteristics of mos (metal-oxide-semiconductor) devices with rapidly grown ultrathin sio2 gate insulators, reprint: interfacial and breakdown characteristics of mos (metal-oxide-semiconductor) devices with rapidly grown ultra

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 533
metal-oxide-semiconductor devices fabricated with tungsten/n+ polysilicon composite gate electrodes and ultrathin silicon dioxide gate insulators grown by rapid thermal growth process in a reactive oxygen ambient were characterized by various electrical measurements the as-fabricated devices with unannealed subhundred-angstrom rapidly grown oxides exhibited breakdown characteristics superior to furnace-grown oxides as evidenced by their excellent breakdown uniformity, an average breakdown field of 15 mv/cm, and an average breakdown charge density of over 50 c/sq cm at a constant stress current density of 1 a/sq cm . the surface cleaning procedure prior to gate oxidation was observed to affect the densities of interfacial charges and surface states in the mos structures
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