비의류제품

fabrication of monocrystalline gaas solar cells utilizing nacl sacrificial substrates. annual report, 1 august 1982-14 october 1983

  • 출판일1999.03
  • 저자
  • 서지사항
  • 등록일 2016.11.02
  • 조회수 519
this report contains results of research done to establish a process technology for fabrication high-efficiency, thin-film, monocrystalline gallium arsenide solar cells employing sodium chloride as a sacrificial substrate. factors limiting the performance of these thin-film cells were identified and solutions were sought damage to the nacl substrate surface caused by dust was reduced then the chemical vapor deposition (cvd) laboratory was renovated to a clean room facility. residual surface defects from chemi-mechanical polishing of the salt substrates were reduced by a vapor etching process developed for nacl. preliminary experiments with vapor etching of germanium films also show promise in regard to obtaining an improved ge-film surface finish. a deposition system also was constructed for low temperature growth of gaas employing plasma enhancement of the organometallic om cvd reaction. (era citation 10: 002108)
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